Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Type:
Journal
Info:
Applied Physics Letters 102, 111910 (2013)
Date:
2013-03-12

Author Information

Name Institution
Geert RampelbergGhent University
Kilian Devloo-CasierGhent University
Davy DeduytscheGhent University
Marc SchaekersIMEC
Nicolas BlascoAir Liquide
Christophe DetavernierGhent University

Films



Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

599