Publication Information

Title: Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Type: Journal

Info: Applied Physics Letters 102, 111910 (2013)

Date: 2013-03-12

DOI: http://dx.doi.org/10.1063/1.4798337

Author Information

Name

Institution

Ghent University

Ghent University

Ghent University

IMEC

Air Liquide

Ghent University

Films

Plasma VN using Custom

Deposition Temperature Range = 70-150C

791114-66-4

7664-41-7

Thermal VN using Custom

Deposition Temperature Range = 70-150C

791114-66-4

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Diffusion Barrier Properties

XRD, X-Ray Diffraction

Unknown

Thickness

XRR, X-Ray Reflectivity

Unknown

Areal Density

XRF, X-Ray Fluorescence

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

599



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