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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets

Type:
Journal
Info:
J. Phys. Chem. C, 2020, 124 (22), pp 11990-12000
Date:
2020-05-12
DOI:
http://dx.doi.org/10.1021/acs.jpcc.0c02976

Author Information

Name Institution
Ji LiuTyndall National Institute, University College Cork
Hong Liang LuFudan University
David Wei ZhangFudan University
M. G. NolanTyndall National Institute, University College Cork

Films

Plasma Co

Hardware used: Simulation
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: -
Diagnostic: -

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: -
Diagnostic: -

Substrates

Co

Notes

1506