In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

Type:
Journal
Info:
Chem. Mater. 2020, 32, 4481-4489
Date:
2020-04-24
DOI:
http://dx.doi.org/10.1021/acs.chemmater.9b05171

Author Information

Name Institution
Nathan J. O'BrienLinköping University
Polla RoufLinköping University
Rouzbeh SamiiLinköping University
Karl RönnbyLinköping University
Sydney C. ButteraCarleton University
Chih-Wei HsuLinköping University
Ivan G. IvanovLinköping University
Vadim KesslerSwedish University of Agricultural Sciences
Lars OjamäeA*STAR (Agency for Science, Technology and Research)
Henrik PedersenA*STAR (Agency for Science, Technology and Research)

Films

Plasma InN

Hardware used: Picosun R200
Tris(1,3-diisopropyltriazenide) indium(III)
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 200-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: -

Substrates

SiC

Notes

1494