Publication Information

Title:
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Type:
Journal
Info:
Chem. Mater. 2020, 32, 4481-4489
Date:
2020-04-24

Author Information

Name Institution
Nathan J. O'BrienLinköping University
Polla RoufLinköping University
Rouzbeh SamiiLinköping University
Karl RönnbyLinköping University
Sydney C. ButteraCarleton University
Chih-Wei HsuLinköping University
Ivan G. IvanovLinköping University
Vadim KesslerSwedish University of Agricultural Sciences
Lars OjamäeA*STAR (Agency for Science, Technology and Research)
Henrik PedersenA*STAR (Agency for Science, Technology and Research)

Films

Plasma InN


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy

Substrates

SiC

Keywords

Notes

1494