Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
Type:
Journal
Info:
Inorg. Chem. 2021, 60, 15, 11025-11031
Date:
2021-07-12
Author Information
| Name | Institution |
|---|---|
| Sydney C. Buttera | Carleton University |
| Polla Rouf | Linköping University |
| Petro Deminskyi | Linköping University |
| Nathan J. O'Brien | Linköping University |
| Henrik Pedersen | Linköping University |
| Sean T. Barry | Carleton University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Stress
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Strain
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry
Substrates
| Silicon |
Notes
| 1601 |