Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

Type:
Journal
Info:
Japanese Journal of Applied Physics 49, 05FA10 (2010)
Date:
2010-01-09
DOI:
http://dx.doi.org/10.1143/JJAP.49.05FA10

Author Information

Name Institution
Jae-Min KimYonsei University
Han-Bo-Ram LeeYonsei University
Clement Lansalot-MatrasAir Liquide
Christian DussarratAir Liquide
Julien GatineauAir Liquide
Hyungjun KimYonsei University

Films

Plasma Co

Hardware used: Quros Plus 150
Cyclopentadienyl Isopropyl Acetamidinato-Cobalt, [Co(CpAMD)]
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

710