Publication Information

Title: Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources

Type: Journal

Info: Journal of Vacuum Science & Technology A 37, 020913 (2019)

Date: 2019-01-08

DOI: http://dx.doi.org/10.1116/1.5079628

Author Information

Name

Institution

Brandenburg University of Technology

Brandenburg University of Technology

Sentech Instruments GmbH

Sentech Instruments GmbH

IHP - Leibniz-Institut für innovative Mikroelektronik

Brandenburg University of Technology

Charles University

Brandenburg University of Technology

Brandenburg University of Technology

Brandenburg University of Technology

Brandenburg University of Technology

Films

Plasma AlN using SENTECH

Deposition Temperature = 350C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

SENTECH SE800

Uniformity

Ellipsometry

SENTECH SE800

Refractive Index

Ellipsometry

SENTECH SE800

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Fixed Charge

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Mobile Charge Density

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Breakdown Voltage

I-V, Current-Voltage Measurements

Custom

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Rigaku Smartlab

Images

SEM, Scanning Electron Microscopy

Mira Tescan

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Autoprobe CP

Substrates

Silicon

Keywords

Plasma Source Comparisons

Notes

1249



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