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Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020913 (2019)
Date:
2019-01-08

Author Information

Name Institution
Małgorzata KotBrandenburg University of Technology
Karsten HenkelBrandenburg University of Technology
Franziska NaumannSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH
Lidia LupinaIHP - Leibniz-Institut für innovative Mikroelektronik
Viola WilkerBrandenburg University of Technology
Peter KusCharles University
Emilia PoźarowskaBrandenburg University of Technology
Samiran GarainBrandenburg University of Technology
Zied RouissiBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Notes

1249