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Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020913 (2019)
Date:
2019-01-08
Author Information
| Name | Institution |
|---|---|
| Małgorzata Kot | Brandenburg University of Technology |
| Karsten Henkel | Brandenburg University of Technology |
| Franziska Naumann | Sentech Instruments GmbH |
| Hassan Gargouri | Sentech Instruments GmbH |
| Lidia Lupina | IHP - Leibniz-Institut für innovative Mikroelektronik |
| Viola Wilker | Brandenburg University of Technology |
| Peter Kus | Charles University |
| Emilia Poźarowska | Brandenburg University of Technology |
| Samiran Garain | Brandenburg University of Technology |
| Zied Rouissi | Brandenburg University of Technology |
| Dieter Schmeißer | Brandenburg University of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Silicon |
Notes
| 1249 |