Publication Information

Title:
Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 7, JULY 2014
Date:
2014-05-08

Author Information

Name Institution
Ting-En HsiehNational Chiao Tung University

Films

Plasma AlN


Thermal Al2O3

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: -

Substrates

Keywords

Gate Dielectric
HEMT, High Electron Mobility Transistor

Notes

253