823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 12, PP. 1888-1891, 2018
Date:
2018-11-15
DOI:
http://dx.doi.org/10.1109/LED.2018.2879543

Author Information

Name Institution
Hongyue WangPeking University
Jinyan WangPeking University
Mengjun LiPeking University
Qirui CaoPeking University
Min YuPeking University
Yandong HePeking University
Wengang WuPeking University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 430C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

AlGaN
GaN

Notes

1204