Publication Information

Title:
823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 12, PP. 1888-1891, 2018
Date:
2018-11-15

Author Information

Name Institution
Hongyue WangPeking University
Jinyan WangPeking University
Mengjun LiPeking University
Qirui CaoPeking University
Min YuPeking University
Yandong HePeking University
Wengang WuPeking University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

AlGaN
GaN

Keywords

Gate Dielectric

Notes

1204