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823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 12, PP. 1888-1891, 2018
Date:
2018-11-15
Author Information
| Name | Institution |
|---|---|
| Hongyue Wang | Peking University |
| Jinyan Wang | Peking University |
| Mengjun Li | Peking University |
| Qirui Cao | Peking University |
| Min Yu | Peking University |
| Yandong He | Peking University |
| Wengang Wu | Peking University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| AlGaN |
| GaN |
Notes
| 1204 |