Publication Information

Title: 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 12, PP. 1888-1891, 2018

Date: 2018-11-15

DOI: http://dx.doi.org/10.1109/LED.2018.2879543

Author Information

Name

Institution

Peking University

Peking University

Peking University

Peking University

Peking University

Peking University

Peking University

Films

Plasma AlN using Unknown

Deposition Temperature = 430C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Transistor Characteristics

Transistor Characterization

-

Substrates

AlGaN

GaN

Keywords

Gate Dielectric

Notes

1204



Shortcuts



© 2014-2019 plasma-ald.com