Publication Information

Title: Crystalline growth of AlN thin films by atomic layer deposition

Type: Conference Proceedings

Info: Journal of Physics: Conference Series 757 (2016) 012003

Date: 2016-09-06

DOI: https://doi.org/10.1088/1742-6596/757/1/012003

Author Information

Name

Institution

KU Leuven

KU Leuven

KU Leuven

Films

Plasma AlN using SENTECH

Deposition Temperature Range = 280-300C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Thickness

Reflectometry

-

Thickness

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Substrates

Si(100)

Glass

Ti

Keywords

Notes

850



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