Formation of Ni silicide from atomic layer deposited Ni

Type:
Journal
Info:
Current Applied Physics Volume 16, Issue 7, 2016, Pages 720 - 725
Date:
2016-04-04
DOI:
http://dx.doi.org/10.1016/j.cap.2016.04.005

Author Information

Name Institution
Jaehong YoonYonsei University
Soo Hyeon KimYonsei University
Hangil KimYeungnam University
Soo-Hyun KimYeungnam University
Hyungjun KimYonsei University
Han-Bo-Ram LeeIncheon National University

Films

Plasma Ni

Hardware used: Unknown
MABONi, Ni(dmamb)2, bis(dimethylamino-2-methyl-2-butoxo)nickel
CAS#: 942311-35-5
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 200C

Thermal Ni

Hardware used: Unknown
MABONi, Ni(dmamb)2, bis(dimethylamino-2-methyl-2-butoxo)nickel
CAS#: 942311-35-5
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Silicon

Notes

822