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Publication Information

Title: Formation of Ni silicide from atomic layer deposited Ni

Type: Journal

Info: Current Applied Physics Volume 16, Issue 7, 2016, Pages 720 - 725

Date: 2016-04-04

DOI: http://dx.doi.org/10.1016/j.cap.2016.04.005

Author Information

Name

Institution

Yonsei University

Yonsei University

Yeungnam University

Yeungnam University

Yonsei University

Incheon National University

Films

Plasma Ni using Unknown

Deposition Temperature = 200C

942311-35-5

7664-41-7

Thermal Ni using Unknown

Deposition Temperature = 300C

942311-35-5

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

822

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