Publication Information

Title:
Nitride passivation of the interface between high-k dielectrics and SiGe
Type:
Journal
Info:
Applied Physics Letters 108, 011604 (2016)
Date:
2015-12-21

Author Information

Name Institution
Kasra SardashtiUniversity of California - San Diego
Kai-Ting HuUniversity of California - San Diego
Kechao TangStanford University
Shailesh MadisettiSUNY Polytechnic Institute
Paul C. McIntyreStanford University
Serge OktyabrskySUNY Polytechnic Institute
Shariq SiddiquiGlobal Foundries
Bhagawan SahuGlobal Foundries
Naomi YoshidaApplied Materials
Jessica KachianApplied Materials
Lin DongApplied Materials
Bernd FruhbergerUniversity of California - San Diego
Andrew C. KummelUniversity of California - San Diego

Films

Other Al2O3

Hardware used: Beneq TFS-200

CAS#: 7664-41-7


CAS#: 7732-18-5

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: I-V, Current-Voltage Measurements

Substrates

SiGe

Keywords

Passivation
Diffusion Barrier

Notes

457