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Nitride passivation of the interface between high-k dielectrics and SiGe

Type:
Journal
Info:
Applied Physics Letters 108, 011604 (2016)
Date:
2015-12-21
DOI:
http://dx.doi.org/10.1063/1.4939460

Author Information

Name Institution
Kasra SardashtiUniversity of California - San Diego
Kai-Ting HuUniversity of California - San Diego
Kechao TangStanford University
Shailesh MadisettiSUNY Polytechnic Institute
Paul C. McIntyreStanford University
Serge OktyabrskySUNY Polytechnic Institute
Shariq SiddiquiGlobal Foundries
Bhagawan SahuGlobal Foundries
Naomi YoshidaApplied Materials
Jessica KachianApplied Materials
Lin DongApplied Materials
Bernd FruhbergerUniversity of California - San Diego
Andrew C. KummelUniversity of California - San Diego

Films

Other Al2O3

Hardware used: Beneq TFS-200
NH3, Ammonia
CAS#: 7664-41-7
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 120-300C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Transistor Characteristics
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

SiGe

Notes

457