Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant

Type:
Journal
Info:
Journal of Nanoscience and Nanotechnology, Volume 15, Number 11, 2015, pp. 8472-8477
Date:
2015-09-01
DOI:
http://dx.doi.org/doi:10.1166/jnn.2015.11452

Author Information

Name Institution
Jae-Hun JungYeungnam University
Seung-Joon LeeYeungnam University
Hyun-Jung LeeYeungnam University
Min Young LeeYeungnam University
Taehoon CheonYeungnam University
So Ik BaeYeungnam University
Masayuki SaitoTanaka
Kazuharu SuzukiTanaka
Shunichi NabeyaTanaka
Jeongyeop LeeHynix Semiconductor
Sangdeok KimHynix Semiconductor
Seungjin YeomHynix Semiconductor
Jong Hyun SeoKorea Aerospace University
Soo-Hyun KimYeungnam University

Films

Plasma Ru

Hardware used: Unknown
dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C16H22O6Ru)
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 175-310C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: -
Diagnostic: -

Substrates

SiO2

Notes

425