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Publication Information

Title: Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant

Type: Journal

Info: Journal of Nanoscience and Nanotechnology, Volume 15, Number 11, 2015, pp. 8472-8477

Date: 2015-09-01

DOI: http://dx.doi.org/doi:10.1166/jnn.2015.11452

Author Information

Name

Institution

Yeungnam University

Yeungnam University

Yeungnam University

Yeungnam University

Yeungnam University

Yeungnam University

Tanaka

Tanaka

Tanaka

Hynix Semiconductor

Hynix Semiconductor

Hynix Semiconductor

Korea Aerospace University

Yeungnam University

Films

Plasma Ru using Unknown

Deposition Temperature Range = 175-310C

0-0-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Thickness

Unknown

Unknown

Substrates

SiO2

Keywords

Notes

425


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