Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 1, 2018
Date:
2017-12-04
DOI:
http://dx.doi.org/10.1116/1.5003388

Author Information

Name Institution
Jae-Min ParkSejong University
Seongyoon KimSejong University
June HwangSejong University
Won Seok HanUP Chemical
Wonyong KohUP Chemical
Won-Jun LeeSejong University

Films

Plasma Ni

Hardware used: CN1 Atomic Premium
Ni(dpdab)2, bis(1,4- diisopropyl- 1,4-diazabutadiene) nickel
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 125-250C

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2500

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: Renishaw Invia Raman

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Substrates

Silicon

Notes

1120