Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition

Type:
Journal
Info:
J. Mater. Chem. C, 2021, 9, 2919-2932
Date:
2021-01-28
DOI:
http://dx.doi.org/10.1039/D0TC03910A

Author Information

Name Institution
Ji LiuTyndall National Institute, University College Cork
Hong Liang LuFudan University
David Wei ZhangFudan University
M. G. NolanTyndall National Institute, University College Cork

Films

Plasma Ru

Hardware used: Simulation
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 277-377C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: -
Diagnostic: -

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: -
Diagnostic: -

Substrates

Ru(001)
Ru(100)

Notes

1674