Publication Information

Title: Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

Type: Journal

Info: Nanoscale Research Letters (2017) 12:138

Date: 2017-02-15

DOI: http://dx.doi.org/10.1186/s11671-017-1925-z

Author Information

Name

Institution

Fudan University

Fudan University

Fudan University

Fudan University

Fudan University

Films

Plasma Ni using Picosun R200

Deposition Temperature Range = 220-310C

1271-28-9

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

JEOL JSM-6701F

Images

SEM, Scanning Electron Microscopy

JEOL JSM-6701F

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Substrates

Al2O3

Keywords

Nucleation

Notes

1019



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