Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:138
Date:
2017-02-15
DOI:
http://dx.doi.org/10.1186/s11671-017-1925-z

Author Information

Name Institution
Shi-Bing QianFudan University
Yong-Ping WangFudan University
Yan ShaoFudan University
Wen-Jun LiuFudan University
Shi-Jin DingFudan University

Films

Plasma Ni

Hardware used: Picosun R200
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 220-310C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6701F

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6701F

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Al2O3

Notes

1019