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Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 031502 (2016)
Date:
2016-02-16
DOI:
http://dx.doi.org/10.1116/1.4943090

Author Information

Name Institution
Inhye LeeHanyang University
Jingyu ParkHanyang University
Heeyoung JeonHanyang University
Hyunjung KimHanyang University
Changhee ShinHanyang University
Seokyoon ShinHanyang University
Kunyoung LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 400C

Plasma Ni

Hardware used: Unknown
Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni(iPr-DAD)2
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Si(100)

Notes

775