Publication Information

Title: Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 031502 (2016)

Date: 2016-02-16

DOI: http://dx.doi.org/10.1116/1.4943090

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma Ru using Custom

Deposition Temperature = 400C

32992-96-4

7664-41-7

Plasma Ni using Unknown

Deposition Temperature = 250C

0-0-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Substrates

Si(100)

Keywords

Silicide

Notes

775



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