Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

Type:
Journal
Info:
RSC Adv., 2017, 7, 11745-11751
Date:
2017-02-12

Author Information

Name Institution
Qian WangChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Lingyan ShenChinese Academy of Sciences
Jingjie LiChinese Academy of Sciences
Dongliang ZhangChinese Academy of Sciences
Ru QianChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences

Films

Plasma AlON

Hardware used: Unknown


CAS#: 7664-41-7

CAS#: 7782-44-7

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

AlGaN

Keywords

Notes

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