Publication Information

Title: Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

Type: Journal

Info: RSC Adv., 2017, 7, 11745-11751

Date: 2017-02-12

DOI: http://dx.doi.org/10.1039/C6RA27190A

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Films

Plasma AlON using Unknown

Deposition Temperature Range N/A

75-24-1

7664-41-7

7782-44-7

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Dispersion

C-V, Capacitance-Voltage Measurements

Unknown

Fixed Charge

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Microstructure

TEM, Transmission Electron Microscope

Unknown

Substrates

AlGaN

Keywords

Notes

995



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