Publication Information

Title: Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Type: Journal

Info: Applied Surface Science, Volume 314, 30 September 2014, Pages 570-574

Date: 2014-07-05

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.07.024

Author Information

Name

Institution

Aalto University

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Passivation

Optical Reflectivity

-

Passivation

PL, PhotoLuminescence

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Substrates

GaAs

Keywords

AlN

Passivation

Notes

PEALD AlN for GaAs passivation.

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