Publication Information

Title:
Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
Type:
Journal
Info:
Applied Surface Science, Volume 314, 30 September 2014, Pages 570-574
Date:
2014-07-05

Author Information

Name Institution
Päivi MattilaAalto University
Markus BosundAalto University
H. JussilaAalto University
A. AierkenAalto University
J. RiikonenAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University
M. SopanenAalto University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Passivation
Analysis: Optical Reflectivity

Characteristic: Passivation
Analysis: PL, PhotoLuminescence

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

GaAs

Keywords

AlN
Passivation

Notes

PEALD AlN for GaAs passivation.
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