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Publication Information

Title: Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Type: Journal

Info: Applied Surface Science, Volume 314, 30 September 2014, Pages 570-574

Date: 2014-07-05

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.07.024

Author Information

Name

Institution

Aalto University

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Passivation

Optical Reflectivity

Unknown

Passivation

PL, PhotoLuminescence

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Substrates

GaAs

Keywords

AlN

Passivation

Notes

PEALD AlN for GaAs passivation.

281



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