Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Type:
Journal
Info:
Applied Surface Science, Volume 314, 30 September 2014, Pages 570-574
Date:
2014-07-05
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.07.024

Author Information

Name Institution
Päivi MattilaAalto University
Markus BosundAalto University
H. JussilaAalto University
A. AierkenAalto University
J. RiikonenAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University
M. SopanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Passivation
Analysis: Optical Reflectivity
Diagnostic: -

Characteristic: Passivation
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

GaAs

Notes

PEALD AlN for GaAs passivation.
281