Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(5), Sep/Oct 2015
Date:
2015-06-15
DOI:
http://dx.doi.org/10.1116/1.4922936

Author Information

Name Institution
Hyunjung KimHanyang University
Jingyu ParkHanyang University
Heeyoung JeonHanyang University
Woochool JangHanyang University
Hyeongtag JeonHanyang University
Junhan YuhPOSCO

Films

Plasma WCN

Hardware used: Unknown
(MeCp)W(CO)2(NO), methylcyclopentadienyl dicarbonyl nitrosyl tungsten
CAS#: 0-0-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 250-450C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI 680 FEAES

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2500

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2500

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku ATX-G

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Jandel

Substrates

SiO2

Notes

PEALD WNC for Cu interconnect diffusion barrier.
314