
PEALD AlN: controlling growth and film crystallinity
Type:
Conference Proceedings
Info:
physica status solidi (c) Volume 12, Issue 7, pages 1036--1042, 2015
Date:
2015-06-05
Author Information
| Name | Institution |
|---|---|
| Sourish Banerjee | University of Twente |
| Antonius A. I. Aarnink | University of Twente |
| Robbert van de Kruijs | University of Twente |
| Alexey Y. Kovalgin | University of Twente |
| Jurriaan Schmitz | University of Twente |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Si(111) |
| Si(100) |
| SiO2 |
Notes
| 511 |
