Properties of AlN grown by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 257 (2011) 7827-7830
Date:
2011-04-05
Author Information
Name | Institution |
---|---|
Markus Bosund | Aalto University |
Timo Sajavaara | University of Jyväskylä |
Mikko Laitinen | University of Jyväskylä |
Teppo Huhtio | Aalto University |
Matti Putkonen | Beneq Oy |
Veli-Matti Airaksinen | Aalto University |
Harri Lipsanen | Aalto University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Refractive Index
Analysis: Reflection Spectroscopy
Characteristic: Extinction Coefficient
Analysis: Reflection Spectroscopy
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
Notes
Beneq TFS-500 PEALD AlN development. |
179 |