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Properties of AlN grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 257 (2011) 7827-7830
Date:
2011-04-05
DOI:
http://dx.doi.org/10.1016/j.apsusc.2011.04.037

Author Information

Name Institution
Markus BosundAalto University
Timo SajavaaraUniversity of Jyväskylä
Mikko LaitinenUniversity of Jyväskylä
Teppo HuhtioAalto University
Matti PutkonenBeneq Oy
Veli-Matti AiraksinenAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Refractive Index
Analysis: Reflection Spectroscopy
Diagnostic: FilmTek 2000

Characteristic: Extinction Coefficient
Analysis: Reflection Spectroscopy
Diagnostic: FilmTek 2000

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Philips Plasmos SD 2300

Substrates

Notes

Beneq TFS-500 PEALD AlN development.
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