Publication Information

Title:
Properties of AlN grown by plasma enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 257 (2011) 7827-7830
Date:
2011-04-05

Author Information

Name Institution
Markus BosundAalto University
Timo SajavaaraUniversity of Jyväskylä
Mikko LaitinenUniversity of Jyväskylä
Teppo HuhtioAalto University
Matti PutkonenBeneq Oy
Veli-Matti AiraksinenAalto University
Harri LipsanenAalto University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Refractive Index
Analysis: Reflection Spectroscopy

Characteristic: Extinction Coefficient
Analysis: Reflection Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Keywords

PEALD Film Development

Notes

Beneq TFS-500 PEALD AlN development.
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