Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 157(4) G111-G116 (2010)
Date:
2010-03-05

Author Information

Name Institution
Jolien DendoovenGhent University
Davy DeduytscheGhent University
Jan MusschootGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University

Films

Plasma Al2O3


Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Conformality, Step Coverage
Analysis: Custom

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Substrates

SiO2

Keywords

Al2O3
Aluminum Compounds
Atomic Layer Deposition
Free Radicals
Plasma CVD
Surface Recombination

Notes

Novel macroscopic, high aspect ratio structure.
Available in Dendooven PhD thesis.
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