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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 157(4) G111-G116 (2010)
Date:
2010-03-05
DOI:
http://dx.doi.org/10.1149/1.3301664

Author Information

Name Institution
Jolien DendoovenGhent University
Davy DeduytscheGhent University
Jan MusschootGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma AlN

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Conformality, Step Coverage
Analysis: Custom
Diagnostic: Custom

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics QE65000 Spectrometer

Substrates

SiO2

Notes

Novel macroscopic, high aspect ratio structure.
Available in Dendooven PhD thesis.
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