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Publication Information

Title: Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: Journal of The Electrochemical Society, 157(4) G111-G116 (2010)

Date: 2010-03-05

DOI: http://dx.doi.org/10.1149/1.3301664

Author Information

Name

Institution

Ghent University

Ghent University

Ghent University

Ghent University

Ghent University

Films

Plasma Al2O3 using Custom ICP

Deposition Temperature = 200C

75-24-1

7782-44-7

Plasma AlN using Custom ICP

Deposition Temperature = 200C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000

Conformality, Step Coverage

Custom

Custom

Plasma Species

OES, Optical Emission Spectroscopy

Ocean Optics QE65000 Spectrometer

Substrates

SiO2

Keywords

Al2O3

Aluminum Compounds

Atomic Layer Deposition

Free Radicals

Plasma CVD

Surface Recombination

Notes

Novel macroscopic, high aspect ratio structure.

Available in Dendooven PhD thesis.

35

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