Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 157(4) G111-G116 (2010)
Date:
2010-03-05
DOI:
http://dx.doi.org/10.1149/1.3301664

Author Information

Name Institution
Jolien DendoovenGhent University
Davy DeduytscheGhent University
Jan MusschootGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma AlN

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Conformality, Step Coverage
Analysis: Custom
Diagnostic: Custom

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics QE65000 Spectrometer

Substrates

SiO2

Keywords

Al2O3
Aluminum Compounds
Atomic Layer Deposition
Free Radicals
Plasma CVD
Surface Recombination

Notes

Novel macroscopic, high aspect ratio structure.
Available in Dendooven PhD thesis.
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