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Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia

Type:
Conference Proceedings
Info:
Mat. Res. Soc. Symp. Proc. Vol. 811
Date:
2004-01-01
DOI:
http://dx.doi.org/10.1557/PROC-811-D1.9

Author Information

Name Institution
Xinye LiuGenus, Inc.
Sasangan RamanathanGenus, Inc.
Eddie LeeGenus, Inc.
Thomas E. SeidelGenus, Inc.

Films

Thermal AlN

Hardware used: Aixtron Genus Stratagem 200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 320-440C

Plasma AlN

Hardware used: Aixtron Genus Stratagem 200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 250-440C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Silicon

Notes

1161