Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy

Type:
Journal
Info:
Applied Surface Science 419 (2017) 107-113
Date:
2017-05-02
DOI:
https://doi.org/10.1016/j.apsusc.2017.05.010

Author Information

Name Institution
Konstantin V. EgorovMoscow Institute of Physics and Technology
Yuri Yu. LebedinskiiMoscow Institute of Physics and Technology
Anatoly A. SolovievMoscow Institute of Physics and Technology
A. ChouprikMoscow Institute of Physics and Technology
Alexander Yu. AzarovUniversity of Oslo
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films

Thermal Ru

Hardware used: Picosun R200
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Other Ru

Hardware used: Picosun R200
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Nucleation
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: NT-MDT NTEGRA Spectra

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7001F

Substrates

HfO2

Notes

Compares thermal ALD processes with and without NH3 plasma substrate pretreatment
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