Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Type:
Journal
Info:
Applied Surface Science 419 (2017) 107-113
Date:
2017-05-02
Author Information
| Name | Institution |
|---|---|
| Konstantin V. Egorov | Moscow Institute of Physics and Technology |
| Yuri Yu. Lebedinskii | Moscow Institute of Physics and Technology |
| Anatoly A. Soloviev | Moscow Institute of Physics and Technology |
| A. Chouprik | Moscow Institute of Physics and Technology |
| Alexander Yu. Azarov | University of Oslo |
| Andrey M. Markeev | Moscow Institute of Physics and Technology |
Films
Thermal Ru
Other Ru
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Nucleation
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Substrates
| HfO2 |
Notes
| Compares thermal ALD processes with and without NH3 plasma substrate pretreatment |
| 1655 |