Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2

Type:
Journal
Info:
Journal of the Korean Physical Society, March 2015, Volume 66, Issue 5, pp 821-827
Date:
2015-03-21

Author Information

Name Institution
Jinho KimHanyang University
Woochool JangHanyang University
Jingyu ParkHanyang University
Heeyoung JeonHanyang University
Hyunjung KimHanyang University
Junhan YuhPOSCO
Hyeongtag JeonHanyang University

Films

Plasma Ni


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Substrates

Si(100)

Keywords

Silicide

Notes

The Si substrate was cleaned with a dilute HF solution (HF : H2O = 1 : 50) for 2 minutes to remove native oxide.
Custom ICP RPALD Ni for silicide formation study.
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