Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2

Type:
Journal
Info:
Journal of the Korean Physical Society, March 2015, Volume 66, Issue 5, pp 821-827
Date:
2015-03-21
DOI:
http://arxiv.org/ftp/arxiv/papers/1408/1408.1252.pdf

Author Information

Name Institution
Jinho KimHanyang University
Woochool JangHanyang University
Jingyu ParkHanyang University
Heeyoung JeonHanyang University
Hyunjung KimHanyang University
Junhan YuhPOSCO
Hyeongtag JeonHanyang University

Films

Plasma Ni

Hardware used: Custom Remote Inductively Coupled Plasma
Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni(iPr-DAD)2
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

The Si substrate was cleaned with a dilute HF solution (HF : H2O = 1 : 50) for 2 minutes to remove native oxide.
Custom ICP RPALD Ni for silicide formation study.
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