Publication Information

Title:
Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
Type:
Journal
Info:
Surface & Coatings Technology 307, Part B (2016) 1096 - 1099
Date:
2016-05-19

Author Information

Name Institution
Young Joon ChoChungnam National University
Hamchorom ChaChungnam National University
Hyo Sik ChangChungnam National University

Films

Other AlON

Hardware used: Unknown


CAS#: 7732-18-5

CAS#: 7664-41-7

Thermal Al2O3


Film/Plasma Properties

Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay

Characteristic: Open Circuit Voltage
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Substrates

Silicon

Keywords

Passivation

Notes

824