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Publication Information

Title: Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell

Type: Journal

Info: Surface & Coatings Technology 307, Part B (2016) 1096 - 1099

Date: 2016-05-19

DOI: http://dx.doi.org/10.1016/j.surfcoat.2016.05.057

Author Information

Name

Institution

Chungnam National University

Chungnam National University

Chungnam National University

Films

Other AlON using Unknown

Deposition Temperature = 250C

75-24-1

7732-18-5

7664-41-7

Thermal Al2O3 using Unknown

Deposition Temperature = 250C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Lifetime

QSSPC, Quasi-Steady-State PhotoConductance Decay

Unknown

Open Circuit Voltage

QSSPC, Quasi-Steady-State PhotoConductance Decay

Unknown

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Photoluminescence

PL, PhotoLuminescence

Unknown

Substrates

Silicon

Keywords

Passivation

Notes

824

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