Publication Information

Title:
Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
Type:
Journal
Info:
Electron Devices, IEEE Transactions on (Volume:62 , Issue: 2)
Date:
2014-12-01

Author Information

Name Institution
Jie-Jie ZhuXidian University

Films

Plasma AlN


Film/Plasma Properties

Substrates

Keywords

Notes

231