Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Type:
Journal
Info:
Electron Devices, IEEE Transactions on (Volume:62 , Issue: 2)
Date:
2014-12-01
DOI:
http://dx.doi.org/10.1109/TED.2014.2377781

Author Information

Name Institution
Jie-Jie ZhuXidian University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

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