Publication Information

Title: Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Type: Journal

Info: Electron Devices, IEEE Transactions on (Volume:62 , Issue: 2)

Date: 2014-12-01

DOI: http://dx.doi.org/10.1109/TED.2014.2377781

Author Information

Name

Institution

Xidian University

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

231



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