About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37(1) 2018 010904
Date:
2018-11-01
DOI:
http://dx.doi.org/10.1116/1.5062842

Author Information

Name Institution
Qipeng FanBeijing Institute of Graphic Communication
Lijun SangBeijing Institute of Graphic Communication
Derong JiangBeijing Institute of Graphic Communication
Lizhen YangBeijing Institute of Graphic Communication
Haibao ZhangBeijing Institute of Graphic Communication
Qiang ChenBeijing Institute of Graphic Communication
Zhongwei LiuBeijing Institute of Graphic Communication

Films

Plasma CoN

Hardware used: Custom Remote Inductively Coupled Plasma
Bis(N,N'-diisopropylacetamidinato)cobalt
CAS#: 635680-58-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 80-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Dektak

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi SU-8020

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi SU-8020

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco diInnova

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL JEM-3000F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-2200PC

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 250

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: RTS-8 Four Point Probe

Substrates

Glass
Silicon

Notes

1722