Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
Type:
Journal
Info:
Semiconductors, 2016, Vol. 50, No. 12, pp 1619--1621.
Date:
2016-05-10
Author Information
| Name | Institution |
|---|---|
| I. V. Shtrom | Russian Academy of Sciences |
| Alexei D. Bouravleuv | Russian Academy of Sciences |
| Yu. B. Samsonenko | Russian Academy of Sciences |
| A. I. Khrebtov | Russian Academy of Sciences |
| I. P. Soshnikov | Russian Academy of Sciences |
| R. R. Reznik | Russian Academy of Sciences |
| G. E. Cirlin | Russian Academy of Sciences |
| Veer Dhaka | Aalto University |
| Alexander Pyymaki Perros | Aalto University |
| Harri Lipsanen | Aalto University |
Films
Plasma AlN
Film/Plasma Properties
Substrates
| GaAs |
Notes
| 1002 |