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Ideal for:
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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Type:
Journal
Info:
Semiconductors, 2016, Vol. 50, No. 12, pp 1619--1621.
Date:
2016-05-10
DOI:
http://dx.doi.org/10.1134/S1063782616120186

Author Information

Name Institution
I. V. ShtromRussian Academy of Sciences
Alexei D. BouravleuvRussian Academy of Sciences
Yu. B. SamsonenkoRussian Academy of Sciences
A. I. KhrebtovRussian Academy of Sciences
I. P. SoshnikovRussian Academy of Sciences
R. R. ReznikRussian Academy of Sciences
G. E. CirlinRussian Academy of Sciences
Veer DhakaAalto University
Alexander Pyymaki PerrosAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

GaAs

Notes

1002