Publication Information

Title: Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

Type: Journal

Info: Semiconductors, 2016, Vol. 50, No. 12, pp 1619--1621.

Date: 2016-05-10

DOI: http://dx.doi.org/10.1134/S1063782616120186

Author Information

Name

Institution

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Russian Academy of Sciences

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature = 200C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

GaAs

Keywords

Passivation

Notes

1002



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