Publication Information

Title:
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
Type:
Journal
Info:
Semiconductors, 2016, Vol. 50, No. 12, pp 1619--1621.
Date:
2016-05-10

Author Information

Name Institution
I. V. ShtromRussian Academy of Sciences
Alexei D. BouravleuvRussian Academy of Sciences
Yu. B. SamsonenkoRussian Academy of Sciences
A. I. KhrebtovRussian Academy of Sciences
I. P. SoshnikovRussian Academy of Sciences
R. R. ReznikRussian Academy of Sciences
G. E. CirlinRussian Academy of Sciences
Veer DhakaAalto University
Alexander Pyymaki PerrosAalto University
Harri LipsanenAalto University

Films

Plasma AlN


Film/Plasma Properties

Substrates

GaAs

Keywords

Passivation

Notes

1002