Publication Information

Title: Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement

Type: Journal

Info: ACS Photonics, 2016, 3 (11), pp 2040-2048

Date: 2016-09-09

DOI: http://dx.doi.org/10.1021/acsphotonics.6b00283

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

Aalto University

University of Arizona

Aalto University

Aalto University

Aalto University

Films

Deposition Temperature = 300C

35733-23-4

7782-44-7

75-24-1

7732-18-5

Plasma Er2O3 using Picosun R200

Deposition Temperature Range = 260-325C

35733-23-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

FEI Helios Nanolab600

Photoluminescence

PL, PhotoLuminescence

Custom

Substrates

Silicon

Keywords

Photonics

Notes

847



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