High performance AlGaN/GaN HEMTs with AlN/SiNx passivation

Type:
Journal
Info:
2015 J. Semicond. 36 074008
Date:
2015-02-05
DOI:
http://dx.doi.org/10.1088/1674-4926/36/7/074008

Author Information

Name Institution
Tan XinHebei Semiconductor Research Institute
Lü YuanjieHebei Semiconductor Research Institute
Gu GuodongHebei Semiconductor Research Institute
Wang LiChina National Defense Sciences Technology Information Center
Dun ShaoboHebei Semiconductor Research Institute
Song XuboHebei Semiconductor Research Institute
Guo HongyuHebei Semiconductor Research Institute
Yin JiayunHebei Semiconductor Research Institute
Cai ShujunHebei Semiconductor Research Institute
Feng ZhihongHebei Semiconductor Research Institute

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

455