Publication Information

Title: High performance AlGaN/GaN HEMTs with AlN/SiNx passivation

Type: Journal

Info: 2015 J. Semicond. 36 074008

Date: 2015-02-05

DOI: http://dx.doi.org/10.1088/1674-4926/36/7/074008

Author Information

Name

Institution

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

China National Defense Sciences Technology Information Center

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

Hebei Semiconductor Research Institute

Films

Plasma AlN using Unknown

Deposition Temperature = 300C

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Passivation

Notes

455



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