650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 2, PP. 260-263, 2018
Date:
2017-12-09
DOI:
http://dx.doi.org/10.1109/LED.2017.2783908

Author Information

Name Institution
Jiacheng LeiHong Kong University of Science and Technology
Jin WeiHong Kong University of Science and Technology
Gaofei TangHong Kong University of Science and Technology
Zhaofu ZhangHong Kong University of Science and Technology
Qingkai QianHong Kong University of Science and Technology
Zheyang ZhengHong Kong University of Science and Technology
Mengyuan HuaHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Notes

1145