Publication Information

Title: Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Type: Journal

Info: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Date: 2014-06-15

DOI: http://dx.doi.org/10.1109/ISPSD.2014.6856051

Author Information

Name

Institution

Hong Kong University of Science and Technology

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

HEMT, High Electron Mobility Transistor

Notes

PEALD AlN for HEMT interfacial layer between Al2O3 gate dielectric and GaN channel.

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