Publication Information

Title:
Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
Type:
Journal
Info:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Date:
2014-06-15

Author Information

Name Institution
Shenghou LiuHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

HEMT, High Electron Mobility Transistor

Notes

PEALD AlN for HEMT interfacial layer between Al2O3 gate dielectric and GaN channel.
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