Title: Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
Info: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Hong Kong University of Science and Technology
HEMT, High Electron Mobility Transistor
PEALD AlN for HEMT interfacial layer between Al2O3 gate dielectric and GaN channel.
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