Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Type:
Journal
Info:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & ICs (ISPSD)
Date:
2014-06-15
DOI:
http://dx.doi.org/10.1109/ISPSD.2014.6856051

Author Information

Name Institution
Shenghou LiuHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

PEALD AlN for HEMT interfacial layer between Al2O3 gate dielectric and GaN channel.
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