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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film

Type:
Journal
Info:
physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014
Date:
2014-05-04
DOI:
http://dx.doi.org/10.1002/pssc.201300442

Author Information

Name Institution
Cheng LiuHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

238