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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
Type:
Journal
Info:
physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014
Date:
2014-05-04
Author Information
| Name | Institution |
|---|---|
| Cheng Liu | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
Keywords
| TFT, Thin Film Transistor |
Notes
| 238 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |