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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
Type:
Journal
Info:
physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014
Date:
2014-05-04
Author Information
| Name | Institution |
|---|---|
| Cheng Liu | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
Keywords
| TFT, Thin Film Transistor |
Notes
| 238 |