Publication Information

Title:
AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
Type:
Journal
Info:
physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014
Date:
2014-05-04
DOI:
http://dx.doi.org/10.1002/pssc.201300442

Author Information

Name Institution
Cheng LiuHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Keywords

TFT, Thin Film Transistor

Notes

238