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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
Type:
Journal
Info:
physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014
Date:
2014-05-04
Author Information
| Name | Institution |
|---|---|
| Cheng Liu | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
Keywords
| TFT, Thin Film Transistor |
Notes
| 238 |