Title: AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
Type: Journal
Info: physica status solidi (c) Volume 11, Issue 3-4, pages 953-956, April 2014
Date: 2014-05-04
DOI: http://dx.doi.org/10.1002/pssc.201300442
Name
Institution
Hong Kong University of Science and Technology
Characteristic
Analysis
Diagnostic
TFT, Thin Film Transistor
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