Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Type:
Journal
Info:
Mater. Res. Express 4 (2017) 025902
Date:
2016-11-08
DOI:
https://doi.org/10.1088/2053-1591/4/2/025902

Author Information

Name Institution
Jie-Jie ZhuXidian University
Xiao-Hua MaXidian University
Bin HouXidian University
Li-Xiang ChenXidian University
Qing ZhuXidian University
Yue HaoXidian University

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

AlGaN

Notes

1000