Publication Information

Title:
Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
Type:
Journal
Info:
Mater. Res. Express 4 (2017) 025902
Date:
2016-11-08

Author Information

Name Institution
Jie-Jie ZhuXidian University
Xiao-Hua MaXidian University
Bin HouXidian University
Li-Xiang ChenXidian University
Qing ZhuXidian University
Yue HaoXidian University

Films

Plasma AlN

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

AlGaN

Keywords

Substrate Plasma Pretreatment

Notes

1000