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Publication Information
Title:
Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
Type:
Journal
Info:
Journal of Applied Physics 114, 144509 (2013)
Date:
2013-09-25
Author Information
Name | Institution |
---|---|
Sen Huang | Chinese Academy of Sciences |
Ke Wei | Chinese Academy of Sciences |
Zhikai Tang | Hong Kong University of Science and Technology |
Shu Yang | Hong Kong University of Science and Technology |
Cheng Liu | Hong Kong University of Science and Technology |
Lei Guo | Peking University |
Bo Shen | Peking University |
Jinhan Zhang | Chinese Academy of Sciences |
Xin Kong | Chinese Academy of Sciences |
Guoguo Liu | Chinese Academy of Sciences |
Yingkui Zheng | Chinese Academy of Sciences |
Xinyu Liu | Chinese Academy of Sciences |
Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Film/Plasma Properties
Substrates
GaN |
Keywords
Passivation |
Diffusion Barrier |
Notes
584 |
Popular Precursors
Top Authors
Erwin (W.M.M.) Kessels |
Hyeongtag Jeon |
Hyungjun Kim |
Mauritius C. M. (Richard) van de Sanden |
Christophe Detavernier |