Title: Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
Type: Journal
Info: Journal of Applied Physics 114, 144509 (2013)
Date: 2013-09-25
DOI: http://dx.doi.org/10.1063/1.4824829
Name
Institution
Chinese Academy of Sciences
Chinese Academy of Sciences
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Peking University
Peking University
Chinese Academy of Sciences
Chinese Academy of Sciences
Chinese Academy of Sciences
Chinese Academy of Sciences
Chinese Academy of Sciences
Hong Kong University of Science and Technology
Characteristic
Analysis
Diagnostic
GaN
Passivation
Diffusion Barrier
584
© 2014-2019 plasma-ald.com