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Publication Information

Title: Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Type: Journal

Info: Journal of Applied Physics 114, 144509 (2013)

Date: 2013-09-25

DOI: http://dx.doi.org/10.1063/1.4824829

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Peking University

Peking University

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Chinese Academy of Sciences

Hong Kong University of Science and Technology

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

GaN

Keywords

Passivation

Diffusion Barrier

Notes

584

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