Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation

Type:
Journal
Info:
Journal of Applied Physics 114, 144509 (2013)
Date:
2013-09-25
DOI:
http://dx.doi.org/10.1063/1.4824829

Author Information

Name Institution
Sen HuangChinese Academy of Sciences
Ke WeiChinese Academy of Sciences
Zhikai TangHong Kong University of Science and Technology
Shu YangHong Kong University of Science and Technology
Cheng LiuHong Kong University of Science and Technology
Lei GuoPeking University
Bo ShenPeking University
Jinhan ZhangChinese Academy of Sciences
Xin KongChinese Academy of Sciences
Guoguo LiuChinese Academy of Sciences
Yingkui ZhengChinese Academy of Sciences
Xinyu LiuChinese Academy of Sciences
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

GaN

Keywords

Passivation
Diffusion Barrier

Notes

584