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The publication database currently has 1567 entries.

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195 Films Compositions

265 Precursors and Plasma Gases

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242 Film and Plasma Characteristics

84 Theses

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In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films Influence of oxygen source on the ferroelectric properties of ALD grown Hf_1-xZr_xO₂ films

Search 1567 plasma ALD publications by:

195 Films Compositions

265 Precursors and Plasma Gases

76 Deposition Hardwares

242 Film and Plasma Characteristics

Band alignment and electrical properties of Al₂O₃/β-Ga₂O₃ heterojunctions

Type:

Journal

Info:

Appl. Phys. Lett. 104, 192104 (2014)

Date:

2014-05-03

DOI:

http://dx.doi.org/10.1063/1.4876920

Author Information

Name	Institution
Takafumi Kamimura	National Institute of Information and Communications Technology

Films

Plasma Al₂O₃

Hardware used: Unknown

TMA, AlMe₃, Trimethyl Aluminum

CAS#: 75-24-1

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Band Alignment

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: -

Substrates

Ga2O3

Keywords

Heterojunctions

Notes

242