Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

Type:
Journal
Info:
Appl. Phys. Lett. 104, 192104 (2014)
Date:
2014-05-03
DOI:
http://dx.doi.org/10.1063/1.4876920

Author Information

Name Institution
Takafumi KamimuraNational Institute of Information and Communications Technology

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Band Alignment
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Ga2O3

Keywords

Heterojunctions

Notes

242