Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

Publication Information

Title: Band alignment and electrical properties of Al₂O₃/β-Ga₂O₃ heterojunctions

Type: Journal

Info: Appl. Phys. Lett. 104, 192104 (2014)

Date: 2014-05-03

DOI: http://dx.doi.org/10.1063/1.4876920

Author Information

Name

Institution

Takafumi Kamimura

National Institute of Information and Communications Technology

Films

Plasma Al₂O₃ using Unknown

Deposition Temperature = 250C

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Band Alignment

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

Ga2O3

Keywords

Heterojunctions

Notes

242

Shortcuts

Films

Deposition Hardware

Film and Plasma Characteristics

Multi-factor Search

ALD and PEALD Background

On-line PEALD Theses

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