A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer

Type:
Conference Proceedings
Info:
Materials Today: Proceedings 17 (2019) 1521–1530
Date:
2019-09-06
DOI:
https://doi.org/10.1016/j.matpr.2019.06.177

Author Information

Name Institution
Chanitda PrapaipongChiang Mai University
Dheerawan BoonyawanChiang Mai University
Chanchai UmongnoChiang Mai University
Supab ChoopunChiang Mai University
Pipat RuankhamChiang Mai University

Films

Plasma Al2O3

Hardware used: Custom Microwave Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-200C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: -

Substrates

Silicon
FTO, F:SnO2

Notes

1520