Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Type:
Journal
Info:
Scientific Reports 8, Article number: 2124 (2018)
Date:
2018-01-19
DOI:
https://doi.org/10.1038/s41598-018-20537-4

Author Information

Name Institution
S. GurbánHungarian Academy of Sciences
P. PetrikHungarian Academy of Sciences
M. SerényiHungarian Academy of Sciences
A. SulyokHungarian Academy of Sciences
M. MenyhárdHungarian Academy of Sciences
Eszter BaradácsUniversity of Debrecen
Bence ParditkaUniversity of Debrecen
C. CserhátiUniversity of Debrecen
G. A. LangerUniversity of Debrecen
Zoltán ErdélyiUniversity of Debrecen

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Substrates

Si(100)

Notes

1276