Publication Information

Title: Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Type: Journal

Info: Scientific Reports 8, Article number: 2124 (2018)

Date: 2018-01-19

DOI: https://doi.org/10.1038/s41598-018-20537-4

Author Information

Name

Institution

Hungarian Academy of Sciences

Hungarian Academy of Sciences

Hungarian Academy of Sciences

Hungarian Academy of Sciences

Hungarian Academy of Sciences

University of Debrecen

University of Debrecen

University of Debrecen

University of Debrecen

University of Debrecen

Films

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 150C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Si(100)

Keywords

Notes

1276



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