Publication Information

Title: Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length

Type: Journal

Info: Journal of Electronic Materials Volume 46, Issue 2, 2017, Pages 782--789

Date: 2016-10-03

DOI: http://dx.doi.org/10.1007/s11664-016-4964-9

Author Information

Name

Institution

Northwestern University

Universiti Kebangsaan Malaysia

Universiti Kebangsaan Malaysia

Université Lille 1

Universiti Kebangsaan Malaysia

Université Lille 1

Films

Thermal Al2O3 using Beneq TFS-200

Deposition Temperature = 300C

75-24-1

7732-18-5

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

InGaAs

Keywords

Notes

840



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