Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length

Type:
Journal
Info:
Journal of Electronic Materials Volume 46, Issue 2, 2017, Pages 782--789
Date:
2016-10-03
DOI:
http://dx.doi.org/10.1007/s11664-016-4964-9

Author Information

Name Institution
Arash DehzangiNorthwestern University
Farhad LarkiUniversiti Kebangsaan Malaysia
M. F. Mohd Razip WeeUniversiti Kebangsaan Malaysia
Nicolas WichmannUniversité Lille
Burhanuddin Y. MajlisUniversiti Kebangsaan Malaysia
Sylvain BollaertUniversité Lille

Films

Thermal Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 300C

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

InGaAs

Notes

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