Publication Information

Title:
Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
Type:
Journal
Info:
Journal of Electronic Materials Volume 46, Issue 2, 2017, Pages 782--789
Date:
2016-10-03

Author Information

Name Institution
Arash DehzangiNorthwestern University
Farhad LarkiUniversiti Kebangsaan Malaysia
M. F. Mohd Razip WeeUniversiti Kebangsaan Malaysia
Nicolas WichmannUniversité Lille 1
Burhanuddin Y. MajlisUniversiti Kebangsaan Malaysia
Sylvain BollaertUniversité Lille 1

Films

Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Substrates

InGaAs

Keywords

Notes

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