Publication Information

Title: Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors

Type: Journal

Info: Nanoscale 2015, Volume 110, Issue , pp 59 - 64

Date: 2015-03-30

DOI: http://dx.doi.org/10.1016/j.sse.2015.01.013

Author Information

Name

Institution

Jörg Schulze

Universitat Stuttgart

Andreas Blech

Universitat Stuttgart

Arnab Datta

Universitat Stuttgart

Inga Anita Fischer

Universitat Stuttgart

D. Haehnel

Universitat Stuttgart

Sandra Naasz

Universitat Stuttgart

Erlend Rolseth

Universitat Stuttgart

Eva-Maria Tropper

Universitat Stuttgart

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

554


Mark Sowa

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