Publication Information

Title:
Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
Type:
Journal
Info:
Nanoscale 2015, Volume 110, Issue , pp 59 - 64
Date:
2015-03-30

Author Information

Name Institution
Jörg SchulzeUniversitat Stuttgart
Andreas BlechUniversitat Stuttgart
Arnab DattaUniversitat Stuttgart
Inga Anita FischerUniversitat Stuttgart
D. HaehnelUniversitat Stuttgart
Sandra NaaszUniversitat Stuttgart
Erlend RolsethUniversitat Stuttgart
Eva-Maria TropperUniversitat Stuttgart

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Keywords

Notes

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