Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors

Type:
Journal
Info:
Nanoscale 2015, Volume 110, Issue , pp 59 - 64
Date:
2015-03-30
DOI:
http://dx.doi.org/10.1016/j.sse.2015.01.013

Author Information

Name Institution
Jörg SchulzeUniversitat Stuttgart
Andreas BlechUniversitat Stuttgart
Arnab DattaUniversitat Stuttgart
Inga Anita FischerUniversitat Stuttgart
D. HaehnelUniversitat Stuttgart
Sandra NaaszUniversitat Stuttgart
Erlend RolsethUniversitat Stuttgart
Eva-Maria TropperUniversitat Stuttgart

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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