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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
Type:
Journal
Info:
Nanoscale 2015, Volume 110, Issue , pp 59 - 64
Date:
2015-03-30
Author Information
| Name | Institution |
|---|---|
| Jörg Schulze | Universitat Stuttgart |
| Andreas Blech | Universitat Stuttgart |
| Arnab Datta | Universitat Stuttgart |
| Inga Anita Fischer | Universitat Stuttgart |
| D. Haehnel | Universitat Stuttgart |
| Sandra Naasz | Universitat Stuttgart |
| Erlend Rolseth | Universitat Stuttgart |
| Eva-Maria Tropper | Universitat Stuttgart |
Films
Film/Plasma Properties
Substrates
Keywords
Notes
| 554 |