Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy

Type:
Journal
Info:
J. Vac. Sci. Technol. A 40(6) Nov/Dec 2022
Date:
2022-09-30
DOI:
http://dx.doi.org/10.1116/6.0002158

Author Information

Name Institution
M. A. MioneEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Custom Spatial
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Optics Tensor 27

Characteristic: Gas Phase Species
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: Bruker Vertex 70

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Avantes AvaSpec-ULS2048x16

Substrates

Silicon

Notes

1702