Publication Information

Title: Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content

Type: Journal

Info: IEEE Transactions on Electron Devices (Volume:62, Issue:1)

Date: 2014-12-02

DOI: http://dx.doi.org/10.1109/TED.2014.2371065

Author Information

Name

Institution

Universitat Stuttgart

Films

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Gate Dielectric

Notes

Plasma Electronic myplas PEALD Al2O3 for p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors gate oxide.

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