Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content

Type:
Journal
Info:
IEEE Transactions on Electron Devices (Volume:62, Issue:1)
Date:
2014-12-02
DOI:
http://dx.doi.org/10.1109/TED.2014.2371065

Author Information

Name Institution
D. HaehnelUniversitat Stuttgart

Films

Plasma Al2O3

Hardware used: myplas Plasma Electronic
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Notes

Plasma Electronic myplas PEALD Al2O3 for p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors gate oxide.
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