Publication Information

Title:
Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
Type:
Journal
Info:
IEEE Transactions on Electron Devices (Volume:62, Issue:1)
Date:
2014-12-02

Author Information

Name Institution
D. HaehnelUniversitat Stuttgart

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Keywords

Gate Dielectric

Notes

Plasma Electronic myplas PEALD Al2O3 for p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors gate oxide.
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