Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 425 (2017) 781 - 787
Date:
2017-06-23
DOI:
https://doi.org/10.1016/j.apsusc.2017.06.241

Author Information

Name Institution
Kangsik KimUlsan National Institute of Science and Technology
Il-Kwon OhYonsei University
Hyungjun KimYonsei University
Zonghoon LeeUlsan National Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: SNTEK Co. ALD 5008
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Strain
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: JEOL JEM ARM 200

Characteristic: Interfacial Layer
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: JEOL JEM ARM 200

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Damage, Defects
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

Compares 13.56MHz and 60MHz plasma sources.
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