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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation

Type:
Journal
Info:
Journal of Luminescence 181 (2017) 223 - 229
Date:
2016-08-17
DOI:
https://doi.org/10.1016/j.jlumin.2016.08.036

Author Information

Name Institution
Hieu T. NguyenThe Australian National University
Daniel MacdonaldThe Australian National University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Notes

881