Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 02D101 (2016)
Date:
2015-09-18
DOI:
http://dx.doi.org/10.1116/1.4932039

Author Information

Name Institution
Yukio FukudaTokyo University of Science
Daichi YamadaTokyo University of Science
Tomoya YokohiraTokyo University of Science
Kosei YanachiTokyo University of Science
Chiaya YamamotoUniversity of Yamanashi
Byeonghak YooUniversity of Yamanashi
Junji YamanakaUniversity of Yamanashi
Tetsuya SatoUniversity of Yamanashi
Toshiyuki TakamatsuSST Inc.
Hiroshi OkamotoHirosaki University

Films

Plasma Al2O3

Hardware used: Custom Microwave Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Plasma Species
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Ge

Notes

372