Publication Information

Title:
Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
Type:
Journal
Info:
IEEE Electron Device Letters Volume:36, Issue:4 Page(s): 315 - 317
Date:
2015-02-06

Author Information

Name Institution
T.N.T. DoChalmers University of Technology
A. MalmrosChalmers University of Technology
P. GamarraIII-V Lab
C. LacamIII-V Lab
M.-A. Di Forte-PoissonIII-V Lab
M. TordjmanIII-V Lab
M. HorbergChalmers University of Technology
R. AubryIII-V Lab
N. RorsmanChalmers University of Technology
D. KuylenstiernaChalmers University of Technology

Films

Plasma Al2O3


Thermal Al2O3


Film/Plasma Properties

Substrates

Keywords

Passivation

Notes

463