Publication Information

Title: Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Type: Journal

Info: Journal of Vacuum Science & Technology B 33, 06FG02 (2015)

Date: 2015-09-21

DOI: http://dx.doi.org/10.1116/1.4932156

Author Information

Name

Institution

Golnaz Karbasian

University of Notre Dame

Alexei O. Orlov

University of Notre Dame

Gregory L. Snider

University of Notre Dame

Films

Plasma Al2O3 using Unknown

Deposition Temperature = 300C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

SiO2

Ni

Keywords

Notes

397


Mark Sowa

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