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200 Films Compositions

271 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Type:

Journal

Info:

Journal of Vacuum Science & Technology B 33, 06FG02 (2015)

Date:

2015-09-21

DOI:

http://dx.doi.org/10.1116/1.4932156

Author Information

Name	Institution
Golnaz Karbasian	University of Notre Dame
Alexei P. Orlov	University of Notre Dame
Gregory L. Snider	University of Notre Dame

Films

Plasma Al₂O₃

Hardware used: Unknown

TMA, trimethyl aluminum, AlMe₃

CAS#: 75-24-1

Where to buy precursor

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 300C

Film/Plasma Properties

Substrates

SiO₂
Ni

Keywords

Notes

397

The publication database currently has 1603 entries.

Search from:

200 Films Compositions

271 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

85 Theses

Search 1603 plasma ALD publications by: 200 Films Compositions 271 Precursors and Plasma Gases 76 Deposition Hardwares 249 Film and Plasma Characteristics