Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Publication Information

Title: Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Type: Journal

Info: Journal of Vacuum Science & Technology B 33, 06FG02 (2015)

Date: 2015-09-21

DOI: http://dx.doi.org/10.1116/1.4932156

Author Information

Name

Institution

Golnaz Karbasian

University of Notre Dame

Alexei O. Orlov

University of Notre Dame

Gregory L. Snider

University of Notre Dame

Films

Plasma Al₂O₃ using Unknown

Deposition Temperature = 300C

TMA, AlMe₃, Trimethyl Aluminum

75-24-1

Where to buy precursor

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

SiO₂

Ni

Keywords

Notes

397

Shortcuts

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Film and Plasma Characteristics

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ALD and PEALD Background

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