In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 89, 131505 (2006)
Date:
2006-09-04
DOI:
http://dx.doi.org/10.1063/1.2357886

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
P. KudlacekWest Bohemia University
E. LangereisEindhoven University of Technology
R. EngelnEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 70C

Film/Plasma Properties

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Substrates

Notes

Custom ICP PEALD Al2O3 reaction mechanism study.
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