Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors

Type:
Journal
Info:
2018 Appl. Phys. Express 11 061103
Date:
2018-04-20
DOI:
http://dx.doi.org/10.7567/APEX.11.061103

Author Information

Name Institution
Dianne C. CorsinoNara Institute of Science and Technology
Juan Paolo S. BermundoNara Institute of Science and Technology
Mami N. FujiiNara Institute of Science and Technology
Kiyoshi TakahashiNippon Aluminum Alkyls, Ltd.
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: JSW-Afty AFTEX-600
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma Al2O3

Hardware used: JSW-Afty AFTEX-600
DMAlH, Dimethylaluminumhydride, Me2AlH, (CH3)2AlH
CAS#: 865-37-2
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

IGZO

Notes

1726